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 BUZ 102 S
SPP52N05
SIPMOS (R) Power Transistor
* N channel * Enhancement mode * Avalanche-rated * dv/dt rated * 175C operating temperature * also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 52 A
RDS(on) 0.023
Package
Ordering Code
BUZ 102 S
TO-220 AB
Q67040-S4011-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 C TC = 100 C
ID
A 52 37
Pulsed drain current
TC = 25 C
IDpuls
208
E AS
Avalanche energy, single pulse
ID = 52 A, V DD = 25 V, RGS = 25 L = 181 H, Tj = 25 C
mJ
245
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 52 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C
52 12
A mJ kV/s
dv/dt
6
V GS P tot
Gate source voltage Power dissipation
TC = 25 C
20
120
V W
Semiconductor Group
1
30/Jan/1998
BUZ 102 S
SPP52N05
Maximum Ratings Parameter Symbol Values Unit
Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
C
1.25 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 90 A
V GS(th)
2.1
IDSS
3
4 A
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 C V DS = 50 V, V GS = 0 V, Tj = 25 C V DS = 50 V, V GS = 0 V, Tj = 150 C
IGSS
0.1 -
0.1 1 100 nA
Gate-source leakage current
V GS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-resistance
V GS = 10 V, ID = 37 A
0.016 0.023
Semiconductor Group
2
30/Jan/1998
BUZ 102 S
SPP52N05
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Dynamic Characteristics
Transconductance
V DS 2 * ID * RDS(on)max, ID = 37 A
gfs
S 10 pF 1220 1525
Input capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
410
515
Reverse transfer capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
210
265 ns
Turn-on delay time
V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8
tr
12
18
Rise time
V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8
td(off)
22
33
Turn-off delay time
V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8
tf
30
45
Fall time
V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8
Qg(th)
25
40 nC
Gate charge at threshold
V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V
Qg(7)
1.5
2.8
Gate charge at 7.0 V
V DD = 40 V, ID = 52 A, VGS =0 to 7 V
Qg(total)
35
55
Gate charge total
V DD = 40 V, ID = 52 A, VGS =0 to 10 V
V (plateau)
45
70 V
Gate plateau voltage
V DD = 40 V, ID = 52 A
Semiconductor Group
3
5.9
30/Jan/1998
BUZ 102 S
SPP52N05
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit
Inverse diode continuous forward current
TC = 25 C
IS
A 52
Inverse diode direct current,pulsed
TC = 25 C
ISM
V SD
-
208 V
Inverse diode forward voltage
V GS = 0 V, IF = 104 A
trr
1.2
1.7 ns
Reverse recovery time
V R = 30 V, IF=lS, diF/dt = 100 A/s
Qrr
70
105 C
Reverse recovery charge
V R = 30 V, IF=lS, diF/dt = 100 A/s
-
0.15
0.25
Semiconductor Group
4
30/Jan/1998
BUZ 102 S
SPP52N05
Power dissipation Ptot = (TC)
Drain current ID = (TC) parameter: VGS 10 V
55 A ID 45 40 35 30 25 20 15
130 W 110 Ptot 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 C 180
10 5 0 0 20 40 60 80 100 120 140 C 180
TC
TC
Safe operating area ID = (VDS) parameter: D = 0, TC = 25C
10 3
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 1 K/W
A
/I
ID 10 2
R V =
t = 19.0s p
DS D
10 0 ZthJC 10 -1
DS (o n)
100 s
10 -2 D = 0.50 0.20 10
1 1 ms
10
-3
0.10 0.05
10 ms
single pulse 10 -4
0.02 0.01
DC 10 0 0 10
1 2
10
V 10
10 -5 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
30/Jan/1998
BUZ 102 S
SPP52N05
Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C
120 A 100 ID 90
g
Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C
0.070
a b c d e f g
Ptot = 120W l
kj i
V [V] h GS a b c d
0.060
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
RDS (on) 0.055 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015
h i j k
80 70 60
e f
e f g h i
50 40 30
c d
j k l
20
b
0.010 V [V] = GS 0.005 0.000 V 5.0 0
a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 i j h k 8.0 9.0 10.0 20.0
10 0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
20
40
60
80
A
110
VDS
ID
Typ. transfer characteristics ID = f (V GS)
parameter: tp = 80 s
VDS2 x ID x RDS(on)max
120
A
I
D
80
60
40
20
0 0
1
2
3
4
5
6
7
8
V
VGS
10
Semiconductor Group
6
30/Jan/1998
BUZ 102 S
SPP52N05
Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 37 A, VGS = 10 V
0.075
Gate threshold voltage
V GS(th)= f (Tj)
parameter:VGS=VDS, ID =90A
5.0 V 4.4
VGS(th)
0.065 0.060 RDS (on) 0.055 0.050
4.0 3.6 3.2
0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -60 -20 20 60 100 C 180 0.8 0.4 0.0 -60 -20 20 60 100 140 V
Tj
2.8 98% 2.4 2.0 typ 1.6
typ max
1.2
min
200
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s
10 3
A
C
pF
IF 10 2
Ciss
10 3
10 1
C
oss
Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 0 0.0
Crss
10 2 0
5
10
15
20
25
30
V
VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
30/Jan/1998
BUZ 102 S
SPP52N05
Avalanche energy EAS = (Tj) parameter: ID = 52 A, VDD = 25 V RGS = 25 , L = 181 H
260 mJ 220 EAS 200 180 160 140
Typ. gate charge VGS = (QGate) parameter: ID puls = 52 A
16
V VGS
12
10 0,2 VDS max 8 0,8 VDS max
120 100 80 60 40 20 0 20 40 60 80 100 120 140 C 180 0 0 10 20 30 40 50 nC 65 4 6
2
Tj
Q Gate
Drain-source breakdown voltage V(BR)DSS = (Tj)
65
V V(BR)DSS
61
59
57
55
53
51 49 -60
-20
20
60
100
C
180
Tj
Semiconductor Group
8
30/Jan/1998


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