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BUZ 102 S SPP52N05 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * dv/dt rated * 175C operating temperature * also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 52 A RDS(on) 0.023 Package Ordering Code BUZ 102 S TO-220 AB Q67040-S4011-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 C TC = 100 C ID A 52 37 Pulsed drain current TC = 25 C IDpuls 208 E AS Avalanche energy, single pulse ID = 52 A, V DD = 25 V, RGS = 25 L = 181 H, Tj = 25 C mJ 245 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 52 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 52 12 A mJ kV/s dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 C 20 120 V W Semiconductor Group 1 30/Jan/1998 BUZ 102 S SPP52N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 C 1.25 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 90 A V GS(th) 2.1 IDSS 3 4 A Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 C V DS = 50 V, V GS = 0 V, Tj = 25 C V DS = 50 V, V GS = 0 V, Tj = 150 C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 37 A 0.016 0.023 Semiconductor Group 2 30/Jan/1998 BUZ 102 S SPP52N05 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS 2 * ID * RDS(on)max, ID = 37 A gfs S 10 pF 1220 1525 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 410 515 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 210 265 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8 tr 12 18 Rise time V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8 td(off) 22 33 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8 tf 30 45 Fall time V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8 Qg(th) 25 40 nC Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V Qg(7) 1.5 2.8 Gate charge at 7.0 V V DD = 40 V, ID = 52 A, VGS =0 to 7 V Qg(total) 35 55 Gate charge total V DD = 40 V, ID = 52 A, VGS =0 to 10 V V (plateau) 45 70 V Gate plateau voltage V DD = 40 V, ID = 52 A Semiconductor Group 3 5.9 30/Jan/1998 BUZ 102 S SPP52N05 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 C IS A 52 Inverse diode direct current,pulsed TC = 25 C ISM V SD - 208 V Inverse diode forward voltage V GS = 0 V, IF = 104 A trr 1.2 1.7 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/s Qrr 70 105 C Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/s - 0.15 0.25 Semiconductor Group 4 30/Jan/1998 BUZ 102 S SPP52N05 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 55 A ID 45 40 35 30 25 20 15 130 W 110 Ptot 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 C 180 10 5 0 0 20 40 60 80 100 120 140 C 180 TC TC Safe operating area ID = (VDS) parameter: D = 0, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A /I ID 10 2 R V = t = 19.0s p DS D 10 0 ZthJC 10 -1 DS (o n) 100 s 10 -2 D = 0.50 0.20 10 1 1 ms 10 -3 0.10 0.05 10 ms single pulse 10 -4 0.02 0.01 DC 10 0 0 10 1 2 10 V 10 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 30/Jan/1998 BUZ 102 S SPP52N05 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 120 A 100 ID 90 g Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.070 a b c d e f g Ptot = 120W l kj i V [V] h GS a b c d 0.060 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 RDS (on) 0.055 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 h i j k 80 70 60 e f e f g h i 50 40 30 c d j k l 20 b 0.010 V [V] = GS 0.005 0.000 V 5.0 0 a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 i j h k 8.0 9.0 10.0 20.0 10 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 40 60 80 A 110 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 120 A I D 80 60 40 20 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 30/Jan/1998 BUZ 102 S SPP52N05 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 37 A, VGS = 10 V 0.075 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS, ID =90A 5.0 V 4.4 VGS(th) 0.065 0.060 RDS (on) 0.055 0.050 4.0 3.6 3.2 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -60 -20 20 60 100 C 180 0.8 0.4 0.0 -60 -20 20 60 100 140 V Tj 2.8 98% 2.4 2.0 typ 1.6 typ max 1.2 min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 A C pF IF 10 2 Ciss 10 3 10 1 C oss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 0 0.0 Crss 10 2 0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 30/Jan/1998 BUZ 102 S SPP52N05 Avalanche energy EAS = (Tj) parameter: ID = 52 A, VDD = 25 V RGS = 25 , L = 181 H 260 mJ 220 EAS 200 180 160 140 Typ. gate charge VGS = (QGate) parameter: ID puls = 52 A 16 V VGS 12 10 0,2 VDS max 8 0,8 VDS max 120 100 80 60 40 20 0 20 40 60 80 100 120 140 C 180 0 0 10 20 30 40 50 nC 65 4 6 2 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 30/Jan/1998 |
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